(Hong Kong)
Product Summary
The BLF147 is a VHF power MOS transistor. It is encapsulated in a 4-lead, SOT121B flange package with a ceramic cap. All leads are isolated fromthe flange. A marking code, showing gate-source voltage(VGS) information is provided for matched pair applications. Refer to the “General” section of the handbook for further information. The applications of the BLF147 are Industrial and military applications in the HF/VHF frequency range.
Parametrics
BLF147 absolute maximum ratings: (1)drain-source voltage:65V; (2)gate-source voltage:±20V; (3)drain current (DC):25A; (4)total power dissipation Tmb ≤ 25℃:220W; (5)storage temperature:-65℃ to 150℃; (6)junction temperature:200℃.
Features
BLF147 features: (1)High power gain; (2)Low intermodulation distortion; (3)Easy power control; (4)Good thermal stability; (5)Withstands full load mismatch.
Diagrams
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 BLF147 |
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Negotiable |
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BLF147,112 |
NXP Semiconductors |
Transistors RF MOSFET Power RF DMOS 150W VHF |
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